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Cotunneling effects in GaAs vertical double quantum dots

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dc.contributor.author Badrutdinov A.
dc.contributor.author Huang S.
dc.contributor.author Kono K.
dc.contributor.author Ono K.
dc.contributor.author Tayurskii D.
dc.date.accessioned 2018-09-18T20:04:14Z
dc.date.available 2018-09-18T20:04:14Z
dc.date.issued 2011
dc.identifier.issn 0021-3640
dc.identifier.uri https://dspace.kpfu.ru/xmlui/handle/net/136214
dc.description.abstract We report observation of Coulomb blockade lifting in GaAs vertical double quantum dot caused by cotunneling processes. One characteristic feature of investigated sample is relatively low potential barriers between dots and reservoirs, which makes cotunneling processes favorable. The measurement of current through the sample under variable bias and gate voltages was carried out at temperature of dilution refrigerator 10 mK. Several distinct features, specific to double dot, were observed and appropriate explanation for them was given. © 2011 Pleiades Publishing, Ltd.
dc.relation.ispartofseries JETP Letters
dc.title Cotunneling effects in GaAs vertical double quantum dots
dc.type Article
dc.relation.ispartofseries-issue 4
dc.relation.ispartofseries-volume 93
dc.collection Публикации сотрудников КФУ
dc.relation.startpage 199
dc.source.id SCOPUS00213640-2011-93-4-SID79955620840


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  • Публикации сотрудников КФУ Scopus [24551]
    Коллекция содержит публикации сотрудников Казанского федерального (до 2010 года Казанского государственного) университета, проиндексированные в БД Scopus, начиная с 1970г.

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