dc.contributor.author |
Saikin S. |
|
dc.contributor.author |
Shen M. |
|
dc.contributor.author |
Cheng M. |
|
dc.contributor.author |
Privman V. |
|
dc.date.accessioned |
2018-09-17T21:42:42Z |
|
dc.date.available |
2018-09-17T21:42:42Z |
|
dc.date.issued |
2003 |
|
dc.identifier.issn |
1944-9399 |
|
dc.identifier.uri |
https://dspace.kpfu.ru/xmlui/handle/net/135336 |
|
dc.description.abstract |
© 2003 IEEE. The Monte Carlo approach is utilized to study spin-polarized electron transport in spintronic device structures. Evolution of the electron spin polarization vector is controlled by the spin-orbit interaction. Spin polarization properties, including the spin-dephasing length and orientation of the polarization vector, are investigated, for the applied voltage from 0.05 V to 0.25 V, and for temperatures ranging from 77 K to 300 K. |
|
dc.relation.ispartofseries |
Proceedings of the IEEE Conference on Nanotechnology |
|
dc.subject |
Computational modeling |
|
dc.subject |
Distribution functions |
|
dc.subject |
Electrons |
|
dc.subject |
Magnetoelectronics |
|
dc.subject |
Monte Carlo methods |
|
dc.subject |
Physics |
|
dc.subject |
Polarization |
|
dc.subject |
Quantum computing |
|
dc.subject |
Region 8 |
|
dc.subject |
Spin polarized transport |
|
dc.title |
Simulation of spin-polarized transport in submicrometer device structures |
|
dc.type |
Conference Paper |
|
dc.relation.ispartofseries-volume |
1 |
|
dc.collection |
Публикации сотрудников КФУ |
|
dc.relation.startpage |
91 |
|
dc.source.id |
SCOPUS19449399-2003-1-SID63749083773 |
|