Simulation of spin-polarized transport in submicrometer device structures

dc.contributor.author	Saikin S.
dc.contributor.author	Shen M.
dc.contributor.author	Cheng M.
dc.contributor.author	Privman V.
dc.date.accessioned	2018-09-17T21:42:42Z
dc.date.available	2018-09-17T21:42:42Z
dc.date.issued	2003
dc.identifier.issn	1944-9399
dc.identifier.uri	https://dspace.kpfu.ru/xmlui/handle/net/135336
dc.description.abstract	© 2003 IEEE. The Monte Carlo approach is utilized to study spin-polarized electron transport in spintronic device structures. Evolution of the electron spin polarization vector is controlled by the spin-orbit interaction. Spin polarization properties, including the spin-dephasing length and orientation of the polarization vector, are investigated, for the applied voltage from 0.05 V to 0.25 V, and for temperatures ranging from 77 K to 300 K.
dc.relation.ispartofseries	Proceedings of the IEEE Conference on Nanotechnology
dc.subject	Computational modeling
dc.subject	Distribution functions
dc.subject	Electrons
dc.subject	Magnetoelectronics
dc.subject	Monte Carlo methods
dc.subject	Physics
dc.subject	Polarization
dc.subject	Quantum computing
dc.subject	Region 8
dc.subject	Spin polarized transport
dc.title	Simulation of spin-polarized transport in submicrometer device structures
dc.type	Conference Paper
dc.relation.ispartofseries-volume	1
dc.collection	Публикации сотрудников КФУ
dc.relation.startpage	91
dc.source.id	SCOPUS19449399-2003-1-SID63749083773

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