Spin injection in spin FETs using a step-doping profile

dc.contributor.author	Shen M.
dc.contributor.author	Saikin S.
dc.contributor.author	Cheng M.
dc.date.accessioned	2018-09-17T21:34:33Z
dc.date.available	2018-09-17T21:34:33Z
dc.date.issued	2005
dc.identifier.issn	1536-125X
dc.identifier.uri	https://dspace.kpfu.ru/xmlui/handle/net/135164
dc.description.abstract	We investigate the effect of a step-doping profile on the spin injection from a ferromagnetic metal contact into a semiconductor quantum well in spin field-effect transistors using a Monte Carlo model. The considered scheme uses a heavily doped layer at the metal-semiconductor interface to vary the Schottky barrier shape and enhance the tunneling current. It is found that spin flux (spin current density) is enhanced proportionally to the total current, and the variation of current spin polarization does not exceed 20%.
dc.relation.ispartofseries	IEEE Transactions on Nanotechnology
dc.subject	Injection
dc.subject	Schottky barrier
dc.subject	Spin
dc.subject	Spin field-effect transistor (FET)
dc.subject	Spintronics
dc.title	Spin injection in spin FETs using a step-doping profile
dc.type	Conference Paper
dc.relation.ispartofseries-issue	1
dc.relation.ispartofseries-volume	4
dc.collection	Публикации сотрудников КФУ
dc.relation.startpage	40
dc.source.id	SCOPUS1536125X-2005-4-1-SID12844255837

Файлы в этом документе

Размер: 43.48Kb

Формат: PDF

Публикации сотрудников КФУ Scopus [24551]
Коллекция содержит публикации сотрудников Казанского федерального (до 2010 года Казанского государственного) университета, проиндексированные в БД Scopus, начиная с 1970г.