dc.contributor.author |
Shafir E. |
|
dc.contributor.author |
Shen M. |
|
dc.contributor.author |
Saikin S. |
|
dc.date.accessioned |
2018-09-17T21:30:31Z |
|
dc.date.available |
2018-09-17T21:30:31Z |
|
dc.date.issued |
2004 |
|
dc.identifier.issn |
1098-0121 |
|
dc.identifier.uri |
https://dspace.kpfu.ru/xmlui/handle/net/135081 |
|
dc.description.abstract |
We have investigated the effect of gate control over the spin polarization drag in an Al0.3Ga0.7As/ GaAs/Al0.3Ga 0.7As heterostructure. The study is motivated by a recent proposal for a nonballistic spin field effect transistor that utilizes the interplay between the Rashba and the Dresselhaus spin-orbit interaction in the device channel. A model that utilizes real material parameters, in order to calculate spin dynamics as a function of the gate voltage, has been developed. From the obtained results, we define the efficiency of the spin-polarization modulation and spin-density modulation. The estimated modulation of the spin polarization at room temperature is of the order of 15-20%. The results show that the effect is not sufficient for device applications. However, it can be observed experimentally by spatially resolved optical pulse-probe techniques. © 2004 The American Physical Society. |
|
dc.relation.ispartofseries |
Physical Review B - Condensed Matter and Materials Physics |
|
dc.title |
Modulation of spin dynamics in a channel of a nonballistic spin field effect transistor |
|
dc.type |
Article |
|
dc.relation.ispartofseries-issue |
24 |
|
dc.relation.ispartofseries-volume |
70 |
|
dc.collection |
Публикации сотрудников КФУ |
|
dc.relation.startpage |
1 |
|
dc.source.id |
SCOPUS10980121-2004-70-24-SID14944354013 |
|