Semiconductor materials for IR optoelectronics

dc.contributor.author	Baryshev N.
dc.contributor.author	Nesmelova I.
dc.date.accessioned	2018-09-17T21:28:32Z
dc.date.available	2018-09-17T21:28:32Z
dc.date.issued	1996
dc.identifier.issn	1070-9762
dc.identifier.uri	https://dspace.kpfu.ru/xmlui/handle/net/135045
dc.description.abstract	Based on studies at the State Institute of Applied Optics Scientific Manufacturing Organization, this review discusses the main properties of III-V, IV-VI, and II-VI narrow-band compounds and solid solutions, as well as the properties of doped germanium and silicon. The use of these materials in IR sources and detectors is considered, along with their use as optical media for optoelectronic devices (filters, modulators, elements for integrated optics and gradient optics, etc.). © 1996 The Optical Society of America.
dc.relation.ispartofseries	Journal of Optical Technology (A Translation of Opticheskii Zhurnal)
dc.title	Semiconductor materials for IR optoelectronics
dc.type	Review
dc.relation.ispartofseries-issue	11
dc.relation.ispartofseries-volume	63
dc.collection	Публикации сотрудников КФУ
dc.relation.startpage	804
dc.source.id	SCOPUS10709762-1996-63-11-SID5244238143

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