Study of ultra-thin Al films deposited on GaAs(100) using positron annihilation induced auger electron spectroscopy and electron induced auger electron spectroscopy

dc.contributor.author	Chen W.
dc.contributor.author	Fazleev N.
dc.contributor.author	Weiss A.
dc.date.accessioned	2018-09-17T20:59:39Z
dc.date.available	2018-09-17T20:59:39Z
dc.date.issued	2003
dc.identifier.issn	0969-806X
dc.identifier.uri	https://dspace.kpfu.ru/xmlui/handle/net/134363
dc.description.abstract	We report study of the stability of ultra-thin Al films deposited on GaAs(100) using positron annihilation induced Auger electron spectroscopy (PAES). After the sample was kept for 7 days at 300 K under UHV conditions, the normalized Al PAES intensity decreased by 33.7±4.6%. Over the same time period, the normalized Ga PAES intensity increased by 55.8±4.8%. PAES spectra provide a direct method of confirming the substitution of Ga for Al in the top layer and Ga diffuse into the Al overlayer faster than As. © 2003 Elsevier Science Ltd. All rights reserved.
dc.relation.ispartofseries	Radiation Physics and Chemistry
dc.subject	Annihilation
dc.subject	Auger
dc.subject	Interdiffusion
dc.subject	Metal thin film
dc.subject	Positron
dc.subject	Semiconductor
dc.title	Study of ultra-thin Al films deposited on GaAs(100) using positron annihilation induced auger electron spectroscopy and electron induced auger electron spectroscopy
dc.type	Conference Paper
dc.relation.ispartofseries-issue	3-4
dc.relation.ispartofseries-volume	68
dc.collection	Публикации сотрудников КФУ
dc.relation.startpage	619
dc.source.id	SCOPUS0969806X-2003-68-34-SID0141850438

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Коллекция содержит публикации сотрудников Казанского федерального (до 2010 года Казанского государственного) университета, проиндексированные в БД Scopus, начиная с 1970г.