dc.contributor.author |
Useinov A. |
|
dc.contributor.author |
Lin H. |
|
dc.contributor.author |
Lai C. |
|
dc.date.accessioned |
2018-04-05T07:10:22Z |
|
dc.date.available |
2018-04-05T07:10:22Z |
|
dc.date.issued |
2017 |
|
dc.identifier.uri |
http://dspace.kpfu.ru/xmlui/handle/net/130400 |
|
dc.description.abstract |
© 2017 The Author(s). The problem of the ballistic electron tunneling is considered in magnetic tunnel junction with embedded non-magnetic nanoparticles (NP-MTJ), which creates additional conducting middle layer. The strong temperature impact was found in the system with averaged NP diameter d av < 1.8 nm. Temperature simulation is consistent with experimental observations showing the transition between dip and classical dome-like tunneling magnetoresistance (TMR) voltage behaviors. The low temperature approach also predicts step-like TMR and quantized in-plane spin transfer torque (STT) effects. The robust asymmetric STT respond is found due to voltage sign inversion in NP-MTJs with barrier asymmetry. Furthermore, it is shown how size distribution of NPs as well as quantization rules modify the spin-current filtering properties of the nanoparticles in ballistic regime. Different quantization rules for the transverse component of the wave vector are considered to overpass the dimensional threshold (d av ≈ 1.8 nm) between quantum well and bulk-assisted states of the middle layer. |
|
dc.title |
Symmetric and Asymmetric Magnetic Tunnel Junctions with Embedded Nanoparticles: Effects of Size Distribution and Temperature on Tunneling Magnetoresistance and Spin Transfer Torque |
|
dc.type |
Article |
|
dc.relation.ispartofseries-issue |
1 |
|
dc.relation.ispartofseries-volume |
7 |
|
dc.collection |
Публикации сотрудников КФУ |
|
dc.source.id |
SCOPUS-2017-7-1-SID85027836218 |
|