dc.contributor.author |
Gurylev V. |
|
dc.contributor.author |
Useinov A. |
|
dc.contributor.author |
Hsieh P. |
|
dc.contributor.author |
Su C. |
|
dc.contributor.author |
Perng T. |
|
dc.date.accessioned |
2018-04-05T07:08:57Z |
|
dc.date.available |
2018-04-05T07:08:57Z |
|
dc.date.issued |
2017 |
|
dc.identifier.issn |
0022-3727 |
|
dc.identifier.uri |
http://dspace.kpfu.ru/xmlui/handle/net/129440 |
|
dc.description.abstract |
© 2017 IOP Publishing Ltd. Fabrication of a ZnO p-n homojunction within a single structure by a simple process is a challenging task. In this work, an intrinsic p-type surface conductive layer of ZnO with a controlled concentration of holes over n-type conductive bulk was obtained by a one-step room-temperature process via hydrogen plasma treatment. Non-contact surface sensitive techniques, such as Kelvin probe force microscopy and conductive force atomic microscopy, confirmed the existence of surface p-type conductivity through analyzing the distribution and concentration of charge carriers on the topmost surface of hydrogenated ZnO. A theoretical framework was constructed to provide a rationale of the p-type surface conductivity and justify its relation to the treatment time. It is believed that this finding will open a new possibility for the fabrication of ZnO based p-n junction devices. |
|
dc.relation.ispartofseries |
Journal of Physics D: Applied Physics |
|
dc.subject |
hydrogen plasma |
|
dc.subject |
p-type |
|
dc.subject |
thin flm |
|
dc.subject |
ZnO |
|
dc.title |
Hydrogenated ZnO thin film with p-type surface conductivity from plasma treatment |
|
dc.type |
Article |
|
dc.relation.ispartofseries-issue |
24 |
|
dc.relation.ispartofseries-volume |
50 |
|
dc.collection |
Публикации сотрудников КФУ |
|
dc.source.id |
SCOPUS00223727-2017-50-24-SID85020438673 |
|