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dc.contributor.author | Gurylev V. | |
dc.contributor.author | Useinov A. | |
dc.contributor.author | Hsieh P. | |
dc.contributor.author | Su C. | |
dc.contributor.author | Perng T. | |
dc.date.accessioned | 2018-04-05T07:08:57Z | |
dc.date.available | 2018-04-05T07:08:57Z | |
dc.date.issued | 2017 | |
dc.identifier.issn | 0022-3727 | |
dc.identifier.uri | http://dspace.kpfu.ru/xmlui/handle/net/129440 | |
dc.description.abstract | © 2017 IOP Publishing Ltd. Fabrication of a ZnO p-n homojunction within a single structure by a simple process is a challenging task. In this work, an intrinsic p-type surface conductive layer of ZnO with a controlled concentration of holes over n-type conductive bulk was obtained by a one-step room-temperature process via hydrogen plasma treatment. Non-contact surface sensitive techniques, such as Kelvin probe force microscopy and conductive force atomic microscopy, confirmed the existence of surface p-type conductivity through analyzing the distribution and concentration of charge carriers on the topmost surface of hydrogenated ZnO. A theoretical framework was constructed to provide a rationale of the p-type surface conductivity and justify its relation to the treatment time. It is believed that this finding will open a new possibility for the fabrication of ZnO based p-n junction devices. | |
dc.relation.ispartofseries | Journal of Physics D: Applied Physics | |
dc.subject | hydrogen plasma | |
dc.subject | p-type | |
dc.subject | thin flm | |
dc.subject | ZnO | |
dc.title | Hydrogenated ZnO thin film with p-type surface conductivity from plasma treatment | |
dc.type | Article | |
dc.relation.ispartofseries-issue | 24 | |
dc.relation.ispartofseries-volume | 50 | |
dc.collection | Публикации сотрудников КФУ | |
dc.source.id | SCOPUS00223727-2017-50-24-SID85020438673 |