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DIFFERENCE IN DBD DEVELOPMENT IN AIR AT NANOSECOND AND MICROSECOND VOLTAGE RISE TIME

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dc.contributor Казанский (Приволжский) федеральный университет
dc.contributor.author Khomich V.Yu. ru_RU
dc.contributor.author Moshkunov S.I. ru_RU
dc.contributor.author Shershunova E.A. ru_RU
dc.date.accessioned 2018-01-10T13:13:28Z
dc.date.available 2018-01-10T13:13:28Z
dc.date.issued 2017
dc.identifier.uri http://dspace.kpfu.ru/xmlui/handle/net/117448
dc.description.abstract Analysis of the discharge current waveform, E/N and ionization rate (α-η) showed that different modes of dielectric barrier discharge (DBD) were realized in 1-mm air gap at nanosecond (ns) and microsecond (us) voltage fall and rise time at the gap ru_RU
dc.relation.ispartofseries "ФИЗИКА НИЗКОТЕМПЕРАТУРНОЙ ПЛАЗМЫ" ФНТП-2017 ru_RU
dc.subject - ru_RU
dc.title DIFFERENCE IN DBD DEVELOPMENT IN AIR AT NANOSECOND AND MICROSECOND VOLTAGE RISE TIME ru_RU
dc.type article
dc.identifier.udk -
dc.description.pages 107-107


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