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Просмотр по автору "Soltamov V."

Просмотр по автору "Soltamov V."

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  • Defects in Nanodiamonds: Application of High-Frequency cw and Pulse EPR, ODMR 
    Yavkin B.; Soltamov V.; Babunts R.; Anisimov A.; Baranov P.; Shakhov F.; Kidalov S.; Vul’ A.; Mamin G.; Orlinskii S. (2014)
    © 2014, Springer-Verlag Wien. Different aspects of applications of electron paramagnetic resonance (EPR) based techniques including high frequency (HF) electron spin echo (ESE), electron-nuclear double resonance (ENDOR) ...
  • EPR and ODMR defect control in AlN bulk crystals 
    Soltamov V.; Ilyin I.; Gurin A.; Tolmachev D.; Romanov N.; Mokhov E.; Mamin G.; Orlinskii S.; Baranov P. (2013)
    The results of pulse electron paramagnetic resonance (EPR), electron nuclear double resonance (ENDOR) and optically detected magnetic resonance (ODMR) are presented to show the electron structure of deep level defect color ...
  • Initialization and read-out of intrinsic spin defects in a van der Waals crystal at room temperature 
    Gottscholl A.; Kianinia M.; Soltamov V.; Orlinskii S.; Mamin G.; Bradac C.; Kasper C.; Krambrock K.; Sperlich A.; Toth M.; Aharonovich I.; Dyakonov V. (2020)
    © 2020, The Author(s), under exclusive licence to Springer Nature Limited. Optically addressable spins in wide-bandgap semiconductors are a promising platform for exploring quantum phenomena. While colour centres in ...
  • Optically Addressable Silicon Vacancy-Related Spin Centers in Rhombic Silicon Carbide with High Breakdown Characteristics and ENDOR Evidence of Their Structure 
    Soltamov V.; Yavkin B.; Tolmachev D.; Babunts R.; Badalyan A.; Davydov V.; Mokhov E.; Proskuryakov I.; Orlinskii S.; Baranov P. (2015)
    © 2015 American Physical Society. We discovered a family of uniaxially oriented silicon vacancy-related centers with S=3/2 in a rhombic 15R-SiC crystalline matrix. We demonstrate that these centers exhibit unique characteristics ...
  • Polytypism driven zero-field splitting of silicon vacancies in 6H -SiC 
    Biktagirov T.; Schmidt W.; Gerstmann U.; Yavkin B.; Orlinskii S.; Baranov P.; Dyakonov V.; Soltamov V. (2018)
    © 2018 American Physical Society. The fine-structure splitting in zero magnetic field allows one to access the coherent control and manipulation of polarized spin states. Here the zero-field splitting (ZFS) of the S=3/2 ...
  • Properties of AlN single crystals doped with Beryllium via high temperature diffusion 
    Soltamov V.; Rabchinskii M.; Yavkin B.; Kazarova O.; Nagalyuk S.; Davydov V.; Smirnov A.; Lebedev V.; Mokhov E.; Orlinskii S.; Baranov P. (2018)
    © 2018 Author(s). We report on co-doping of high-quality AlN single crystals by group II Beryllium acceptors by means of diffusion from the vapour phase at a temperature of 1850 °C. We discovered that Be is characterized ...
  • Room Temperature High-Field Spin Dynamics of NV Defects in Sintered Diamonds 
    Yavkin B.; Mamin G.; Orlinskii S.; Kidalov S.; Shakhov F.; Vul' A.; Soltamova A.; Soltamov V.; Baranov P. (2013)
    Sintered oriented nanodiamond arrays with the extremely high concentrations of the nitrogen-vacancy (NV) centers (up to 103 ppm) were investigated by the W-band (94 GHz) electron spin echo electron paramagnetic resonance ...
  • Shallow Donors and Deep-Level Color Centers in Bulk AlN Crystals: EPR, ENDOR, ODMR and Optical Studies 
    Soltamov V.; Ilyin I.; Soltamova A.; Tolmachev D.; Romanov N.; Gurin A.; Khramtsov V.; Mokhov E.; Makarov Y.; Mamin G.; Orlinskii S.; Baranov P. (2013)
    The results of studies of shallow donors and deep-level color centers in bulk AlN crystals are presented. Two shallow donors (presumably oxygen located on the nitrogen site and carbon located on the aluminum site) are ...
  • Spin Centres in SiC for Quantum Technologies 
    Astakhov G.; Simin D.; Dyakonov V.; Yavkin B.; Orlinskii S.; Proskuryakov I.; Anisimov A.; Soltamov V.; Baranov P. (2016)
    © 2016, Springer-Verlag Wien.Atomic-scale colour centres in bulk and nanocrystalline SiC are promising for quantum information processing, photonics and sensing at ambient conditions. Their spin state can be initialized, ...
  • Strain broadening of the 1042-nm zero phonon line of the NV- center in diamond: A promising spectroscopic tool for defect tomography 
    Biktagirov T.; Smirnov A.; Davydov V.; Doherty M.; Alkauskas A.; Gibson B.; Soltamov V. (2017)
    © 2017 American Physical Society. The negatively charged nitrogen-vacancy (NV-) center in diamond is a promising candidate for many quantum applications. Here, we examine the splitting and broadening of the center's infrared ...

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