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Annihilation of positrons trapped at the (100) and (111) surfaces of Si

Fazleev N.; Kuttler K.; Fry J.; Weiss A. (1997)

We present results of theoretical studies of positron surface states and positron annihilation characteristics at the clean non reconstructed (100) and (111) surfaces of Si performed within the modified atomistic, superposition ...
Interface defects of Al/GaAs(100) detected by Positron Annihilation Induced Auger Electron Spectroscopy (PAES)

Chen W.; Fazleev N.; Fry J.; Weiss A. (2001)

The interfacial layers between a metal overlayer and the semiconductor substrate are an integral part of semiconductor devices. As devices continue to shrink and epitaxial layers are made thinner, device performance has ...
Low-energy positrons at the Si(100)-2×1 surface with adsorbed hydrogen and oxygen

Fazleev N.; Fry J.; Weiss A. (2001)

Positron annihilation induced Auger spectra from the Si(100) surface exposed to hydrogen and oxygen are analyzed by performing calculations of positron surface states and annihilation characteristics of surface trapped ...
Positron annihilation induced Auger electron spectroscopic studies of reconstructed semiconductor surfaces

Fazleev N.; Reed J.; Starnes S.; Weiss A. (2011)

The positron annihilation induced Auger spectrum from GaAs(100) displays six As and three Ga Auger peaks below 110 eV corresponding to M4,5VV, M2M4V, M2,3M4,5M4,5 Auger transitions for As and M2,3M4,5M4,5 Auger transitions ...
Positron probes of the Ge(1 0 0) surface: The effects of surface reconstructions and electron-positron correlations on positron trapping and annihilation characteristics

Fazleev N.; Jung E.; Weiss A. (2007)

Positron annihilation induced Auger electron spectroscopy (PAES) has been applied to study the Ge(1 0 0) surface. The high-resolution PAES spectrum from the Ge(1 0 0) surface displays several strong Auger peaks corresponding ...
Positron states and annihilation characteristics at semiconductor surfaces

Fazleev N.; Fry J.; Weiss A. (1997)

Experimental PAES spectra from the (100) and (111) surfaces of Ge display several strong Auger peaks in the measured energy range corresponding to M4,5N1N2,3 M2,3M4,5M4,5 M2,3M4,5V , and M1M2,3N1,2,3 Auger transitions. ...
Positron trapping at quantum-dot-like particles on metal surfaces

Fazleev N.; Fry J.; Nadesalingam M.; Weiss A. (2006)

Measurements of the positron annihilation-induced Auger electron (PAES) spectra from the Fe-Cu alloy surfaces with quantum-dot-like Cu nanoparticles embedded in Fe reveal a decrease of the Fe M2,3VV positron annihilation-induced ...
Studies of oxidation and thermal reduction of the Cu(100) surface using positron annihilation induced Auger electron spectroscopy

Fazleev N.; Nadesalingam M.; Maddox W.; Weiss A. (2011)

Positron annihilation induced Auger electron spectroscopy (PAES) measurements from the surface of an oxidized Cu(100) single crystal show a large increase in the intensity of the annihilation induced Cu M2,3VV Auger peak ...
Studies of oxidation of the Cu(100) surface using low energy positrons

Fazleev N.; Maddox W.; Nadesalingam M.; Rajeshwar K.; Weiss A. (2009)

Changes in the surface of an oxidized Cu(100) single crystal resulting from vacuum annealing have been investigated using positron annihilation induced Auger electron spectroscopy (PAES). PAES measurements show a large ...
Studies of positron states and annihilation characteristics at the reconstructed (100) surface of GaAs

Fazleev N.; Fry J.; Weiss A. (2003)

The high-resolution positron-annihilation-induced Auger spectrum from GaAs(100) displays six As and three Ga Auger peaks below 110eV corresponding to M4,5VV, M2M4V, M2,3M 45M45 Auger transitions for As and M2,3M 4,5M4,5 ...
Studies of positron trapping at quantum-dot-like particles on metal surfaces

Fazleev N. (2005)

The decrease of the Fe M2,3 VV positron annihilation induced Auger signal intensity and the enhancement of the Cu one with enrichment of the Cu content of the Fe-Cu alloy is explained by theoretical calculations as being ...
Studies of the Auger spectrum from the Si(1 1 1) surface using positron annihilation induced Auger electron spectroscopy

Fazleev N.; Fry J.; Starnes S.; Weiss A. (2003)

The high-resolution positron-annihilation-induced Auger spectrum from the Si(111) surface displays an Auger signal corresponding to the L2,3VV Auger transition for Si. The Auger signal intensity is used to obtain experimental ...
Study of ultra-thin Al films deposited on GaAs(100) using positron annihilation induced auger electron spectroscopy and electron induced auger electron spectroscopy

Chen W.; Fazleev N.; Weiss A. (2003)

We report study of the stability of ultra-thin Al films deposited on GaAs(100) using positron annihilation induced Auger electron spectroscopy (PAES). After the sample was kept for 7 days at 300 K under UHV conditions, the ...

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