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Browsing by Author "Šauša O."

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Carbonization in boron-ion-implanted polymethylmethacrylate as revealed from Raman spectroscopy and electrical measurements

Kavetskyy T.; Nowak J.; Borc J.; Rusnák J.; Šauša O.; Stepanov A. (2016)

© 2016 Taylor and Francis Group, LLC. The results of Raman spectroscopy and electrical measurements of 40 keV boron-ion-implanted polymethylmethacrylate with ion doses from 6.25 × 1014 to 5.0 × 1016 ions/cm2 are reported ...
Doppler broadening of the annihilation line study of organic-inorganic hybrid ureasil-based composites

Kavetskyy T.; Šauša O.; Petkova T.; Boev V.; Petkov P.; Kukhta A.; Stepanov A. (2015)

© Springer Science+Business Media Dordrecht 2015. The organic-inorganic hybrid ureasil-based composites, containing polyether chains covalently linked to a silica framework through urea bridges, referred as ureasilicates ...
High-dose boron and silver ion implantation into PMMA probed by slow positrons: Effects of carbonization and formation of metal nanoparticles

Kavetskyy T.; Iida K.; Nagashima Y.; Kuczumow A.; Šauša O.; Nuzhdin V.; Valeev V.; Stepanov A. (2017)

© Published under licence by IOP Publishing Ltd.The Doppler broadening slow positron beam spectroscopy (SPBS) data for the previously observed effect of carbonization in high-dose (>1016 ion/cm2) 40 keV boron-ion-implanted ...
Low-temperature positron annihilation study of B+-ion implanted PMMA

Kavetskyy T.; Tsmots V.; Voloshanska S.; Šauša O.; Nuzhdin V.; Valeev V.; Osin Y.; Stepanov A. (2014)

Temperature dependent positron annihilation lifetime spectroscopy (PALS) measurements in the range of 50-300 K are carried out to study positronium formation in 40 keV B+-ion implanted polymethylmethacrylate(B:PMMA) with ...
Low-temperature positron annihilation study of B<sup>+</sup>-ion implanted PMMA

Kavetskyy T.; Tsmots V.; Voloshanska S.; Šauša O.; Nuzhdin V.; Valeev V.; Osin Y.; Stepanov A. (2014)

© 2014 AIP Publishing LLC. Temperature dependent positron annihilation lifetime spectroscopy (PALS) measurements in the range of 50-300K are carried out to study positronium formation in 40 KeV B<sup>+</sup>-ion implanted ...
On the application of methods of positron annihilation spectroscopy for studying radiation-stimulated processes in chalcogenide glassy semiconductors

Kavetskyy T.; Tsmots V.; Šauša O.; Stepanov A. (2014)

Unirradiated and γ-irradiated (average energy E = 1.25 MeV and dose Φ = 2.41 MGy) chalcogenide glassy semiconductors (CGSs) As2S3 and Ge15.8As21S63.2 are studied by positron annihilation lifetime spectroscopy (PALS) and ...
Positron annihilation study of the juniperus communis based biomaterial NEFROVIL

Kavetskyy T.; Voloshanska S.; Komar I.; Šauša O.; Stepanov A. (2015)

© Springer Science+Business Media Dordrecht 2015. The results of positron annihilation lifetime (PAL) measurements of the Juniperus communis based biomaterial NEFROVIL are reported for the first time. Three- and four-component ...
Structural modification of chalcogenide glasses by gamma-irradiation studied with DBAL technique

Kavetskyy T.; Tsmots V.; Šauša O.; Stepanov A. (2012)

The original experimental results on the study of structural modification of chalcogenide glasses by 60Co γ-irradiation with energy of 1.25 MeV and dose of 2.41 MGy for As2S3, Ge15.8As21S63.2, Ge9.5As28.6S61.9 and ...

Now showing items 1-8 of 8

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Browsing by Author "Šauša O."

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