Электронный архив

Просмотр по автору "Gerstmann U."

Просмотр по автору "Gerstmann U."

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  • EPR, ESE and pulsed ENDOR study of nitrogen related centers in 4H-SiC wafers grown by different technologies 
    Kalabukhova E.; Lukin S.; Savchenko D.; Mitchel W.; Greulich-Weber S.; Gerstmann U.; Pöppl A.; Hoentsch J.; Rauls E.; Rozentzveig Y.; Mokhov E.; Syväjärvi M.; Yakimova R. (2007)
    D-band electron paramagnetic resonance (EPR) measurements as well as X and Q-band field-swept Electron Spin Echo (ESE) and pulsed Electron Nuclear Double Resonance (ENDOR) studies were performed on a series of n-type 4H-SiC ...
  • Hyperfine and nuclear quadrupole splitting of the NV- ground state in 4H -SiC 
    Murzakhanov F.F.; Yavkin B.V.; Mamin G.V.; Orlinskii S.B.; Von Bardeleben H.J.; Biktagirov T.; Gerstmann U.; Soltamov V.A. (2021)
    Optically addressable spin-triplet defects in silicon carbide, such as divacancies and negatively charged nitrogen vacancy (NV-) allow to develop modern quantum technologies operating in the near-infrared range based on ...
  • Polytypism driven zero-field splitting of silicon vacancies in 6H -SiC 
    Biktagirov T.; Schmidt W.; Gerstmann U.; Yavkin B.; Orlinskii S.; Baranov P.; Dyakonov V.; Soltamov V. (2018)
    © 2018 American Physical Society. The fine-structure splitting in zero magnetic field allows one to access the coherent control and manipulation of polarized spin states. Here the zero-field splitting (ZFS) of the S=3/2 ...

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