Vorob’ev V.; Rogov A.; Osin Y.; Nuzhdin V.; Valeev V.; Eidel’man K.; Tabachkova N.; Ermakov M.; Stepanov A.
(2019)
© 2019, Pleiades Publishing, Ltd. Abstract: Low-energy (E = 30 keV) Ag + ions have been implanted into single-crystalline Si wafers (c-Si) with an implantation dose varying from 1.25 × 10 15 to 1.5 × 10 17 ions cm –2 and ...