Stepanov A.; Nuzhdin V.; Valeev V.; Vorobev V.; Rogov A.; Osin Y.
(2019)
© 2018 Elsevier Ltd Ag+-ion implantation of single-crystal c-Si at low-energy (E = 30 keV) high-doses (D = 1.25⋅1015–1.5⋅1017 ion/cm2) and current density (J = 2, 8, 15 μA/cm2) was carried out. The changes of Si surface ...