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MATERIALS RESEARCH FOUNDATIONS: radiation effects in silicon carbide.
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| dc.contributor.author | A. A. LEBEDEV. | |
| dc.date.accessioned | 2024-01-26T21:45:19Z | |
| dc.date.available | 2024-01-26T21:45:19Z | |
| dc.date.issued | 2017 | |
| dc.identifier.citation | MATERIALS RESEARCH FOUNDATIONS: radiation effects in silicon carbide. - [Place of publication not identified]: MATERIALS RESEARCH FORUM, 2017 - 1 online resource - URL: https://libweb.kpfu.ru/ebsco/pdf/1426558.pdf | |
| dc.identifier.isbn | 1945291117 | |
| dc.identifier.isbn | 9781945291111 | |
| dc.identifier.uri | https://dspace.kpfu.ru/xmlui/handle/net/178995 | |
| dc.description.abstract | The book reviews the most interesting, in the author's opinion, publications concerned with radiation defects formed in 6H-, 4H-, and 3C-SiC under irradiation with electrons, neutrons, and some kinds of ions. At the beginning, the SiC electrical parameters making this material promising for application in modern electronics are discussed. | |
| dc.description.tableofcontents | 2.8 Effect of the energy of recoil atoms on conductivity compensation in moderately doped n-Si and n-SiC under irradiation with MeV electrons and protons2.8.1 Introduction; 2.8.2 Generation of primary radiation defects under electron irradiation; 2.8.3 Formation of secondary radiation defects; 2.8.4 Comparison with experiment; Conclusion; References; 3; 3.1 Introduction; 3.2 Intrinsic defects in silicon carbide; 3.2.1 Centers in the lower half of the energy gap; 3.2.2 Defects in the upper half of the energy gap; 3.3 Radiation doping of SiC; 3.3.1 Electrons; 3.3.2 Neutrons. | |
| dc.description.tableofcontents | 3.3.3 Alpha -- particles3.3.4 Protons; 3.3.5 Ion implantation; 3.5 Radiation -- stimulated photoluminescence in SiC; 3.5.1 "Defect" photoluminescence; 3.5.2 Restorian of SiC characteristics upon annealing; References; 4; 4.1 Change in parameters of SiC devices under irradiation; 4.1.1 Schottky diodes; 4.1.2 PN diodes; 4.1.3 SiC field -- effect transistors; 4.2 Possible transformation of the SiC polytype under irradiation; 4.2.1 Possible resons for the polytypism of SiC; 4.2.2 Selected experimental results; 4.3 Comparison of the radiation hardnesses of silicon and silicon carbide. | |
| dc.description.tableofcontents | 4.3.1 Dependence of the radiation hardness on the functional purpose of a device4.3.2 Effect of temperature on the radiation hardness; 4.4 Conclusion; 4.5 Acknowledgments; References; keywords_editors. | |
| dc.language | English | |
| dc.language.iso | en | |
| dc.publisher | [Place of publication not identified] MATERIALS RESEARCH FORUM | |
| dc.relation.ispartofseries | Materials Research Foundations. volume 6 (2017) | |
| dc.subject.other | Silicon carbide -- Effect of radiation on. | |
| dc.subject.other | Materials science -- Data processing. | |
| dc.subject.other | SCIENCE / Chemistry / Inorganic | |
| dc.subject.other | Electronic books. | |
| dc.title | MATERIALS RESEARCH FOUNDATIONS: radiation effects in silicon carbide. | |
| dc.type | Book | |
| dc.description.pages | 1 online resource | |
| dc.collection | Электронно-библиотечные системы | |
| dc.source.id | EN05CEBSCO05C2996 |
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