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dc.contributor.author | Biktagirov T. | |
dc.contributor.author | Schmidt W. | |
dc.contributor.author | Gerstmann U. | |
dc.contributor.author | Yavkin B. | |
dc.contributor.author | Orlinskii S. | |
dc.contributor.author | Baranov P. | |
dc.contributor.author | Dyakonov V. | |
dc.contributor.author | Soltamov V. | |
dc.date.accessioned | 2019-01-22T20:58:46Z | |
dc.date.available | 2019-01-22T20:58:46Z | |
dc.date.issued | 2018 | |
dc.identifier.issn | 2469-9950 | |
dc.identifier.uri | https://dspace.kpfu.ru/xmlui/handle/net/149716 | |
dc.description.abstract | © 2018 American Physical Society. The fine-structure splitting in zero magnetic field allows one to access the coherent control and manipulation of polarized spin states. Here the zero-field splitting (ZFS) of the S=3/2 silicon vacancy-related centers in 6H-SiC is explored by means of electron paramagnetic resonance and electron nuclear double resonance techniques, combined with first-principle calculations. We show that the centers not only possess significantly different absolute values of ZFS, but they also differ in their sign. This diversity is rationalized by a flattened/elongated character of their spin-density distribution, potentially alters spin-photon entanglement, and suggests these centers for qubits in the upcoming technology of quantum communication and quantum-information processing. | |
dc.relation.ispartofseries | Physical Review B | |
dc.title | Polytypism driven zero-field splitting of silicon vacancies in 6H -SiC | |
dc.type | Article | |
dc.relation.ispartofseries-issue | 19 | |
dc.relation.ispartofseries-volume | 98 | |
dc.collection | Публикации сотрудников КФУ | |
dc.source.id | SCOPUS24699950-2018-98-19-SID85056331335 |