Electron dynamics at GaAs-AlGaAs heterojunction studied by ultrafast spectroscopy

dc.contributor.author	Leontyev A.
dc.contributor.author	Ivanin K.
dc.contributor.author	Mitrofanova T.
dc.contributor.author	Lobkov V.
dc.contributor.author	Samartsev V.
dc.date.accessioned	2018-09-18T20:24:56Z
dc.date.available	2018-09-18T20:24:56Z
dc.date.issued	2013
dc.identifier.issn	1742-6588
dc.identifier.uri	https://dspace.kpfu.ru/xmlui/handle/net/139650
dc.description.abstract	In this letter the electron and spin dynamics at GaAs/AlGaAs heterojunction was studied by ultrafast spectroscopy techniques (photon echo and transient grating studies). Relaxation times and diffusion coefficients of photoexcited electrons and spins were obtained using pure optical setup. The estimated spin diffusion coefficient value of 160 cm2/s is relatively high and comparable to the electron diffusion coefficient of 200 cm2/s. This feature makes GaAs/AlGaAs heterosructure a promising material for practical application in semiconductor spintronics. © Published under licence by IOP Publishing Ltd.
dc.relation.ispartofseries	Journal of Physics: Conference Series
dc.title	Electron dynamics at GaAs-AlGaAs heterojunction studied by ultrafast spectroscopy
dc.type	Conference Paper
dc.relation.ispartofseries-issue	1
dc.relation.ispartofseries-volume	478
dc.collection	Публикации сотрудников КФУ
dc.source.id	SCOPUS17426588-2013-478-1-SID84891814055

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Публикации сотрудников КФУ Scopus [24551]
Коллекция содержит публикации сотрудников Казанского федерального (до 2010 года Казанского государственного) университета, проиндексированные в БД Scopus, начиная с 1970г.