Показать сокращенную информацию
dc.contributor.author | Useinov A. | |
dc.contributor.author | Lin H. | |
dc.contributor.author | Lai C. | |
dc.date.accessioned | 2018-04-05T07:10:22Z | |
dc.date.available | 2018-04-05T07:10:22Z | |
dc.date.issued | 2017 | |
dc.identifier.uri | http://dspace.kpfu.ru/xmlui/handle/net/130400 | |
dc.description.abstract | © 2017 The Author(s). The problem of the ballistic electron tunneling is considered in magnetic tunnel junction with embedded non-magnetic nanoparticles (NP-MTJ), which creates additional conducting middle layer. The strong temperature impact was found in the system with averaged NP diameter d av < 1.8 nm. Temperature simulation is consistent with experimental observations showing the transition between dip and classical dome-like tunneling magnetoresistance (TMR) voltage behaviors. The low temperature approach also predicts step-like TMR and quantized in-plane spin transfer torque (STT) effects. The robust asymmetric STT respond is found due to voltage sign inversion in NP-MTJs with barrier asymmetry. Furthermore, it is shown how size distribution of NPs as well as quantization rules modify the spin-current filtering properties of the nanoparticles in ballistic regime. Different quantization rules for the transverse component of the wave vector are considered to overpass the dimensional threshold (d av ≈ 1.8 nm) between quantum well and bulk-assisted states of the middle layer. | |
dc.title | Symmetric and Asymmetric Magnetic Tunnel Junctions with Embedded Nanoparticles: Effects of Size Distribution and Temperature on Tunneling Magnetoresistance and Spin Transfer Torque | |
dc.type | Article | |
dc.relation.ispartofseries-issue | 1 | |
dc.relation.ispartofseries-volume | 7 | |
dc.collection | Публикации сотрудников КФУ | |
dc.source.id | SCOPUS-2017-7-1-SID85027836218 |