Ag<sup>+</sup>-ion implantation of silicon

dc.contributor.author	Stepanov A.
dc.contributor.author	Nuzhdin V.
dc.contributor.author	Valeev V.
dc.contributor.author	Vorobev V.
dc.contributor.author	Osin Y.
dc.date.accessioned	2018-04-05T07:09:30Z
dc.date.available	2018-04-05T07:09:30Z
dc.date.issued	2017
dc.identifier.issn	1042-6507
dc.identifier.uri	http://dspace.kpfu.ru/xmlui/handle/net/129777
dc.description.abstract	© 2018 A. L. Stepanov, V. I. Nuzhdin, V. F. Valeev, V. V. Vorobev, and Y. N. Osin The new results on the optical reflection of the Si surface layers implanted by silver ions at low energies of 30 keV over a wide dose range from 5.0 × 10 14 to 1.5 × 10 17 ion/cm 2 are presented. As the ion dose of irradiation was increased, a monotonic decrease in the reflection intensity in the ultraviolet region of the spectrum was observed, due to amorphization and macrostructuring of the Si surface. On the other hand, in the long-wavelength region, a selective reflection band appears with a maximum near 830 nm due to plasmon resonance of Ag nanoparticles synthesized during implantation.
dc.relation.ispartofseries	Phosphorus, Sulfur and Silicon and the Related Elements
dc.subject	ion implantation
dc.subject	porous silicon
dc.subject	Silver nanoparticles
dc.title	Ag<sup>+</sup>-ion implantation of silicon
dc.type	Article in Press
dc.collection	Публикации сотрудников КФУ
dc.relation.startpage	1
dc.source.id	SCOPUS10426507-2017-SID85039156847

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