Rogov R.; Nuzhdin V.; Valeev V.; Gumarov A.; Tagirov L.; Klimovich I.; Stepanov A.
(2019)
© 2019 Elsevier Ltd For the first time, Cu+-ion implantation into single-crystal c-Ge with an energy of E = 40 keV, doses (D) from 1.8·1015 to 1.5·1017 ion/cm2 and current density of J = 5 μA/cm2 was carried out. Using ...