Bazarov V.; Valeev V.; Nuzhdin V.; Osin Y.; Gumarov G.; Stepanov A.
(2015)
© (2015) Trans Tech Publications, Switzerland. Monocrystalline silicon wafers implanted by cobalt ions with energy of 40 keV at a fluence range from 6.6×1012 to 2.5×1017 Co+-ion/cm2 were investigated by optical spectroscopic ...