Gumarov A.I.; Rogov A.M.; Stepanov A.L.
(2020)
© 2020 Elsevier Ltd The results of low-energy high-dose implantation of single-crystal c-Si by Cu+ ions at energy 40 keV, current density 8 μA/cm2 and doses of 3.1·1016 and 1.25·1017 ion/cm2 are presented. It was shown ...