The technique of definition of iron concentration in a surface layer of Si(100) is developed by use of spectrometer Spectroscan-U. The measurements of intensity of X-ray fluorescent line FeKα as a function of turn of initial ...

The introduction of optically active defects (such as atomic clusters, dislocations, precipitates) into a silicon single crystal using irradiation, plastic deformation, or heat treatment has been considered a possible ...